1
GATE ECE 1989
MCQ (Single Correct Answer)
+2
-0.6
Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability:
A
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 2 English Option 1
B
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 2 English Option 2
C
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 2 English Option 3
D
GATE ECE 1989 Analog Circuits - Bipolar Junction Transistor Question 2 English Option 4
2
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
Each transistor in the Darlington pair (see Fig. below) has hfe = 100. The overall hfe of the composite transistor neglecting the leakage current is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 46 English
A
1000
B
10001
C
10100
D
10200
3
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
The quiescent collector current Ic, of a transistor is increased by changing resistance. As a result
A
gm will not be affected
B
gm will decrease
C
gm will increase
D
gm will increase or decrease depending upon bias stability.
4
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
The amplifier circuit shown below uses a compostie transistor of a MOSFET and BIPOLAR in cascade. ALL capacitance are large. gm of the MOSFET = 2 mA/V , and hfe of the BIPOLAR = 99. The overall Transconductance gm of the composite transistor is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 21 English
A
198 mA/V.
B
9.9 mA/V.
C
4.95 mA/V.
D
1.98 mA/V.
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