Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let I_C be the collector current, V_BE be the base-emitter voltage and V_T be the thermal voltage. Also, 𝑔_m and 𝑟_o are the small-signal transconductance and output resistance of the transistor, respectively. Which one of the following conditions ensures a nearly constant small signal voltage gain for a wide range of values of R_E?

In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ?

For the amplifier shown in the figure, the BJT parameters are V_BE = 0.7 V, $$\beta $$ = 200, and thermal voltage V_T = 25 mV. The voltage gain (V_o/V_i of the amplifier is ______.

A BJT is baised in forward active mode Assume V_BE = 0.7 V, kT/q = 25 mV and reverse saturation current I_s = 10^-13A. The transconductance of the BJT (in mA/V) is