1
GATE ECE 2015 Set 2
Numerical
+2
-0
In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical
parameters with β >> 1. The open circuit small signal voltage gain is approximately _______.
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2
GATE ECE 2014 Set 1
Numerical
+2
-0
A BJT is baised in forward active mode Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation current Is = 10-13A. The transconductance of the BJT (in mA/V) is
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3
GATE ECE 2014 Set 1
Numerical
+2
-0
For the amplifier shown in the figure, the BJT parameters are VBE = 0.7 V, $$\beta $$ = 200, and thermal voltage VT = 25 mV. The voltage gain (Vo/Vi of the amplifier is ______.
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4
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ?
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Control Systems
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Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Representation of Continuous Time Signal Fourier Series Transmission of Signal Through Continuous Time LTI Systems Miscellaneous Sampling Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Discrete Time Signal Z Transform Transmission of Signal Through Discrete Time Lti Systems
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