GATE ECE 2024 | Bipolar Junction Transistor Question 1 | Analog Circuits

GATE ECE 2024

MCQ (More than One Correct Answer)

-1.33

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?

Under high-level injection condition in forward active mode, $\beta$ will decrease with increase in the magnitude of collector current.

Under low-level injection condition in forward active mode, where the current at the emitter-base junction is dominated by recombination-generation process, $\beta$ will decrease with increase in the magnitude of collector current.

$\beta$ will be lower when the BJT is in saturation region compared to when it is in active region.

A higher value of $\beta$ will lead to a lower value of the collector-to-emitter breakdown voltage.

GATE ECE 2017 Set 2

Numerical

-0

In the circuit shown, transistors Q₁ and Q₂ are biased at a collector current of 2.6 mA. Assuming that transistor current gains are sufficiently large to assume collector current equal to emitter current and thermal voltage of 26m V, the magnitude of voltage gain V_o/V_s in the mid-band frequency range is _____________ (up to second decimal place). GATE ECE 2017 Set 2 Analog Circuits - Bipolar Junction Transistor Question 9 English

GATE ECE 2017 Set 2 Analog Circuits - Bipolar Junction Transistor Question 9 English

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GATE ECE 2017 Set 1

Numerical

-0

For the DC analysis of the Common-Emitter amplifier shown, neglect the base current and assume that the emitter and collector current are equal. Given that V_T = 25mV, V_BE = 0.7V, and the BJT output r₀ is practically infinite. Under these conditions the midband voltage gain magnitude, a_v = $$\left| {{v_0}/{v_i}} \right|\,\,\,V/V,$$ is _____ GATE ECE 2017 Set 1 Analog Circuits - Bipolar Junction Transistor Question 11 English

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GATE ECE 2017 Set 1

Numerical

-0

In the figure shown, the npn transistor acts as a switch. GATE ECE 2017 Set 1 Analog Circuits - Bipolar Junction Transistor Question 10 English

For the input v_in(t)as shown in the figure, the transistor switches between the cut-off and saturation regions of operation, when T is large. Assume collector-to-emitter voltage saturation V_CE(sat) = 0.2V and base-to-emitter voltage V_BE = 0.7V. The minimum value of the common-base current gain$$\left( \alpha \right)$$ of the transistor for the switching should be _________.

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