A BJT is baised in forward active mode Assume V_BE = 0.7 V, kT/q = 25 mV and reverse saturation current I_s = 10^-13A. The transconductance of the BJT (in mA/V) is

In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R₂ in k$$\Omega $$ to produce I_c = 1mA is

The voltage gain A_v of the circuit shown below is

For the BJT Q₁ in the circuit shown below, $$\beta = \infty ,\,\,\,\,{V_{BEon\,}}\, = \,0.7V,\,\,\,{V_{CEsat}}\, = \,0.7V.$$. The switch is initially closed. at time t = 0, the switch is opened. The time t at which q₁ leaves the active region is