1
GATE ECE 2014 Set 1
Numerical
+2
-0
A BJT is baised in forward active mode Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation current Is = 10-13A. The transconductance of the BJT (in mA/V) is
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2
GATE ECE 2014 Set 1
Numerical
+2
-0
For the amplifier shown in the figure, the BJT parameters are VBE = 0.7 V, $$\beta $$ = 200, and thermal voltage VT = 25 mV. The voltage gain (Vo/Vi of the amplifier is ______. GATE ECE 2014 Set 1 Analog Circuits - Bipolar Junction Transistor Question 29 English
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3
GATE ECE 2014 Set 4
Numerical
+2
-0
A BJT in common-base configuration is used to amplify a signal received by a $$50\,\Omega $$ antena. Assume kT/q = 25 mV. The value of the collector bias current ( in mA ) required to match the input impedance of the amplifier to the impedance of the antena is ______.
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4
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+2
-0.6
Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let IC be the collector current, VBE be the base-emitter voltage and VT be the thermal voltage. Also, ๐‘”m and ๐‘Ÿo are the small-signal transconductance and output resistance of the transistor, respectively. Which one of the following conditions ensures a nearly constant small signal voltage gain for a wide range of values of RE? GATE ECE 2014 Set 4 Analog Circuits - Bipolar Junction Transistor Question 23 English
A
$${g_m}{R_E} < < \,1$$
B
$${I_C}{R_E} > > \,{V_T}$$
C
$${g_m}{R_o} > > \,1$$
D
$${V_{BE}}\, > > {V_T}$$

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