1
GATE ECE 2014 Set 1
Numerical
+2
-0
A BJT is baised in forward active mode Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation current Is = 10-13A. The transconductance of the BJT (in mA/V) is
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2
GATE ECE 2014 Set 1
Numerical
+2
-0
For the amplifier shown in the figure, the BJT parameters are VBE = 0.7 V, $$\beta $$ = 200, and thermal voltage VT = 25 mV. The voltage gain (Vo/Vi of the amplifier is ______. GATE ECE 2014 Set 1 Analog Circuits - Bipolar Junction Transistor Question 21 English
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3
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R2 in k$$\Omega $$ to produce Ic = 1mA is GATE ECE 2013 Analog Circuits - Bipolar Junction Transistor Question 23 English
A
20
B
3
C
40
D
50
4
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The voltage gain Av of the circuit shown below is GATE ECE 2012 Analog Circuits - Bipolar Junction Transistor Question 24 English
A
$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$
B
$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$
C
$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$
D
$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$
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