A BJT is baised in forward active mode Assume V_BE = 0.7 V, kT/q = 25 mV and reverse saturation current I_s = 10^-13A. The transconductance of the BJT (in mA/V) is

In the circuit shown below, the silicon npn transistor Q has a very high value of $$\beta $$. The required value of R₂ in k$$\Omega $$ to produce I_c = 1mA is

The voltage gain A_v of the circuit shown below is

For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current I_co = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current I_B = 20$$\mu {\rm A}$$. The collector current I_c for this mode of operation is