For the common collector amplifier shown in the figure, the BJT has high $${V_{CE\left( {sat} \right)}},$$ and $${V_{BE}}$$ $$\, = \,\,0.7\,\,\,V$$. The maximum undistorted peak-to-peak output voltage $${V_o}$$ (in Volts) is _____.

In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ?

A BJT is baised in forward active mode Assume V_BE = 0.7 V, kT/q = 25 mV and reverse saturation current I_s = 10^-13A. The transconductance of the BJT (in mA/V) is

For the amplifier shown in the figure, the BJT parameters are V_BE = 0.7 V, $$\beta $$ = 200, and thermal voltage V_T = 25 mV. The voltage gain (V_o/V_i of the amplifier is ______.