For the common collector amplifier shown in the figure, the BJT has high $${V_{CE\left( {sat} \right)}},$$ and $${V_{BE}}$$ $$\, = \,\,0.7\,\,\,V$$. The maximum undistorted peak-to-peak output voltage $${V_o}$$ (in Volts) is _____.

A BJT in common-base configuration is used to amplify a signal received by a $$50\,\Omega $$ antena. Assume kT/q = 25 mV. The value of the collector bias current ( in mA ) required to match the input impedance of the amplifier to the impedance of the antena is ______.

Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let I_C be the collector current, V_BE be the base-emitter voltage and V_T be the thermal voltage. Also, 𝑔_m and 𝑟_o are the small-signal transconductance and output resistance of the transistor, respectively. Which one of the following conditions ensures a nearly constant small signal voltage gain for a wide range of values of R_E?

In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ?