1
GATE ECE 2014 Set 4
Numerical
+2
-0
For the common collector amplifier shown in the figure, the BJT has high $${V_{CE\left( {sat} \right)}},$$ and $${V_{BE}}$$ $$\, = \,\,0.7\,\,\,V$$. The maximum undistorted peak-to-peak output voltage $${V_o}$$ (in Volts) is _____.
2
GATE ECE 2014 Set 3
+2
-0.6
In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ?
A
For $${R_c}\,\, = \,\,1k\Omega ,$$ the BJT operates in the saturation region.
B
For For $${R_c}\,\, = \,\,3k\Omega ,$$ the BJT operates in the saturation region
C
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the cut-off region.
D
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the linear region.
3
GATE ECE 2014 Set 1
Numerical
+2
-0
A BJT is baised in forward active mode Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation current Is = 10-13A. The transconductance of the BJT (in mA/V) is
4
GATE ECE 2014 Set 1
Numerical
+2
-0
For the amplifier shown in the figure, the BJT parameters are VBE = 0.7 V, $$\beta$$ = 200, and thermal voltage VT = 25 mV. The voltage gain (Vo/Vi of the amplifier is ______.