The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10^{- 19}C, thermal voltage=26mV and electron mobility = 1350cm²/V-s

The magnitude of the electric field at x=0.5 μm is

The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10^{- 19}C, thermal voltage=26mV and electron mobility = 1350cm²/V-s

The magnitude of the electron drift current density at x=0.5 μm is

A silicon sample 'A' is doped with 10¹⁸ atoms/cm³ of Boron. Another sample 'B' of identical dimensions is doped with 10¹⁸ atoms/cm³ of Phosphorus. The ratio of electron to hole mobility is 1/3. The ratio of conductivity of the sample A to B is

The electron concentration in a sample of uniformly doped n-type silicon at 300^oK varies linearly from $$10^{17}/cm^3$$ at x = 0 to $$6\times10^{16}/cm^3$$ at x = 2 $$\mu m$$. Assume a situation that electrons are supplied to keep this concentration gradient constant with time.If electronic charge is $$1.6\times10^{-19}\;coulomb$$ and the diffusion constant $$D_n=3\;cm^2/s$$, the current density in the silicon, if no electric field is present is