1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
An n-type silicon bar 0.1 cm long and $$100\;\mu m^2$$ in cross-sectional area has a majority
carrier concentration of $$5\times10^{20}/m^3$$ and the carrier mobility is $$0.13\;\;m^2/v-s\;$$ at
300oK. if the charge of an electron is 1.6×10-19 coulomb, then the resistance of the
bar is
2
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
A semiconductor is irradiated with light such that carriers are uniformly
generated throughout its volume. The semiconductor is n-type with $$N_D=10^{19}/cm^3$$. If the excess electron concentration in the steady state id $$\triangle n=10^{15}/cm^3$$ and if $$\tau_p=10\;\mu\;sec$$ [minority carrier life time] the generation rate due to
irradiation
3
GATE ECE 1991
MCQ (Single Correct Answer)
+2
-0.6
A silicon sample is uniformly doped with 1016 phosphorous atoms/cm3 and 2 ×1016 boron atoms/cm3. If all the dopants are fully ionized, the material is
4
GATE ECE 1987
MCQ (More than One Correct Answer)
+2
-0.6
In an intrinsic semiconductor the free electron concentration depends on
Questions Asked from Semiconductor Physics (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series
Fourier Transform
Continuous Time Signal Laplace Transform
Discrete Time Signal Fourier Series Fourier Transform
Discrete Fourier Transform and Fast Fourier Transform
Discrete Time Signal Z Transform
Continuous Time Linear Invariant System
Discrete Time Linear Time Invariant Systems
Transmission of Signal Through Continuous Time LTI Systems
Sampling
Transmission of Signal Through Discrete Time Lti Systems
Miscellaneous
Communications
Electromagnetics
General Aptitude