1
GATE ECE 2014 Set 2
Numerical
+2
-0
Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.
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2
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10- 19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s

The magnitude of the electric field at x=0.5 μm is

A
1 KV/cm
B
5 KV/cm
C
10 KV/cm
D
25 KV/cm
3
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10- 19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s

The magnitude of the electron drift current density at x=0.5 μm is

A
2.16x104 A/cm2
B
1.08x104 A/cm2
C
4.32x103 A/cm2
D
6.48x102 A/cm2
4
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A silicon sample 'A' is doped with 1018 atoms/cm3 of Boron. Another sample 'B' of identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of electron to hole mobility is 1/3. The ratio of conductivity of the sample A to B is
A
3
B
1/3
C
2/3
D
3/2
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