Assume electronic charge q = 1.6×10^-19 C, kT/q = 25 mV and electron mobility μ_n = 1000 cm²/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×10²¹/cm⁴, the magnitude of electron diffusion current density (in A/cm²) is _________.

The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10^{- 19}C, thermal voltage=26mV and electron mobility = 1350cm²/V-s

The magnitude of the electron drift current density at x=0.5 μm is

The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10^{- 19}C, thermal voltage=26mV and electron mobility = 1350cm²/V-s

The magnitude of the electric field at x=0.5 μm is

A silicon sample 'A' is doped with 10¹⁸ atoms/cm³ of Boron. Another sample 'B' of identical dimensions is doped with 10¹⁸ atoms/cm³ of Phosphorus. The ratio of electron to hole mobility is 1/3. The ratio of conductivity of the sample A to B is