1
GATE ECE 2014 Set 4
Numerical
+2
-0
Consider a silicon sample doped with ND = 1×1015/cm3 donor atoms. Assume that the intrinsic carrier concentration ni = 1.5×1010/cm3. If the sample is additionally doped with NA = 1×1018/cm3 acceptor atoms, the approximate number of electrons/cm3 in the sample, at T=300 K, will be _________________.
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2
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+2
-0.6
An N-type semiconductor having uniform doping is biased as shown in the figure. GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 6 English

If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor?

A
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 1
B
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 2
C
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 3
D
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 6 English Option 4
3
GATE ECE 2014 Set 2
Numerical
+2
-0
Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.
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4
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10- 19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s GATE ECE 2010 Electronic Devices and VLSI - Semiconductor Physics Question 12 English

The magnitude of the electric field at x=0.5 μm is

A
1 KV/cm
B
5 KV/cm
C
10 KV/cm
D
25 KV/cm
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