1
GATE ECE 1991
MCQ (Single Correct Answer)
+2
-0.6
A silicon sample is uniformly doped with 1016 phosphorous atoms/cm3 and 2 ×1016 boron atoms/cm3. If all the dopants are fully ionized, the material is
A
n-type with carrier concentration of 1016/cm3
B
p-type with carrier concentration of 1016/cm3
C
p-type with carrier concentration of 2 ×1016/cm3
D
n-type with carrier concentration of 2 ×1016/cm3
2
GATE ECE 1987
MCQ (More than One Correct Answer)
+2
-0
In an intrinsic semiconductor the free electron concentration depends on
A
Effective mass of electrons only.
B
Effective mass of holes only.
C
Temperature of the Semiconductor.
D
Width of the forbidden energy band of the semiconductor.
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