GATE ECE 2022 | Semiconductor Physics Question 3 | Electronic Devices and VLSI

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GATE ECE 2022

MCQ (More than One Correct Answer)

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Select the CORRECT statements regarding semiconductor devices

Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.

Collector region is generally more heavily doped than Base region in a BJT.

Total current is spatially constant in a two terminal electronic device in dark under steady state condition.

Mobility of electrons always increases with temperature in Silicon beyond 300 K.

GATE ECE 2017 Set 1

MCQ (Single Correct Answer)

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A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?

Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites

Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

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A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 20 English

GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 20 English

Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor

GATE ECE 2015 Set 2

Numerical

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An n–type silicon sample is uniformly illuminated with light which generates 10²⁰ electron hole pairs per cm³ per second. The minority carrier lifetime in the sample is 1 $$\mathrm\mu$$s.In the steady state, the hole concentration in the sample is approximately 10^x , where x is an integer. The value of x is __________________

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