1
GATE ECE 2022
MCQ (More than One Correct Answer)
+2
-0

Select the CORRECT statements regarding semiconductor devices

A
Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.
B
Collector region is generally more heavily doped than Base region in a BJT.
C
Total current is spatially constant in a two terminal electronic device in dark under steady state condition.
D
Mobility of electrons always increases with temperature in Silicon beyond 300 K.
2
GATE ECE 2017 Set 1
Numerical
+2
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The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1x1016 $$cm^{-3}$$ and electronic charge q = 1.6x10-19 C. If a bias of 5V is applied across a 1 $$\mu$$m region of this semiconductor, the resulting current density in this region, in kA/cm2, is _________. GATE ECE 2017 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 14 English
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3
GATE ECE 2015 Set 2
Numerical
+2
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A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section and a length of 1cm as shown in figure. The donor doping concentration ND and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm-3 and 1000 cm2 V-1s-1, respectively. The average time (in $$\mu$$s) taken by the electrons to move from one end of the bar to other end is _______________. GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 15 English
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4
GATE ECE 2014 Set 4
Numerical
+2
-0
Consider a silicon sample doped with ND = 1×1015/cm3 donor atoms. Assume that the intrinsic carrier concentration ni = 1.5×1010/cm3. If the sample is additionally doped with NA = 1×1018/cm3 acceptor atoms, the approximate number of electrons/cm3 in the sample, at T=300 K, will be _________________.
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