1
GATE ECE 2017 Set 1
Numerical
+2
-0
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1x1016 $$cm^{-3}$$ and electronic charge q = 1.6x10-19 C. If a bias of 5V is applied across a 1 $$\mu$$m region of this semiconductor, the resulting current density in this region, in kA/cm2, is _________.
2
GATE ECE 2015 Set 2
Numerical
+2
-0
A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section and a length of 1cm as shown in figure. The donor doping concentration ND and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm-3 and 1000 cm2 V-1s-1, respectively. The average time (in $$\mu$$s) taken by the electrons to move from one end of the bar to other end is _______________.
3
GATE ECE 2014 Set 4
Numerical
+2
-0
Consider a silicon sample doped with ND = 1×1015/cm3 donor atoms. Assume that the intrinsic carrier concentration ni = 1.5×1010/cm3. If the sample is additionally doped with NA = 1×1018/cm3 acceptor atoms, the approximate number of electrons/cm3 in the sample, at T=300 K, will be _________________.
4
GATE ECE 2014 Set 4
+2
-0.6
An N-type semiconductor having uniform doping is biased as shown in the figure.

If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor?

A
B
C
D
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