GATE ECE 2023 | Semiconductor Physics Question 7 | Electronic Devices and VLSI

GATE ECE 2023

Numerical

-0.67

In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T = 300 K is 1 $$\times$$ 10$$^{19}$$ cm$$^{-3}$$. The thermal equilibrium hole concentration in silicon at 400 K is _____________ $$\times$$ 10$$^{13}$$ cm$$^{-3}$$ (rounded off to two decimal places).

Given kT at 300 K is 0.026 eV.

Your input ____

GATE ECE 2022

MCQ (More than One Correct Answer)

-0.67

Select the CORRECT statements regarding semiconductor devices

Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.

Collector region is generally more heavily doped than Base region in a BJT.

Total current is spatially constant in a two terminal electronic device in dark under steady state condition.

Mobility of electrons always increases with temperature in Silicon beyond 300 K.

GATE ECE 2017 Set 1

Numerical

-0

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1x10¹⁶ $$cm^{-3}$$ and electronic charge q = 1.6x10^-19 C. If a bias of 5V is applied across a 1 $$\mu$$m region of this semiconductor, the resulting current density in this region, in kA/cm², is _________. GATE ECE 2017 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 14 English

GATE ECE 2017 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 14 English

Your input ____

GATE ECE 2015 Set 2

Numerical

-0

A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section and a length of 1cm as shown in figure. The donor doping concentration N_D and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm^-3 and 1000 cm² V^-1s^-1, respectively. The average time (in $$\mu$$s) taken by the electrons to move from one end of the bar to other end is _______________. GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 15 English