Consider that the concentration of electrons in a semiconductor bar varies linearly from $2 \times 10^{17} \mathrm{~cm}^{-3}$ at $x=1 \mu \mathrm{~m}$ to $1 \times 10^{16} \mathrm{~cm}^{-3}$ at $x=4 \mu \mathrm{~m}$ along the $x$-direction. Assume that the concentration of electrons is not varying along other directions (that is along $y$ and $z$-directions).

[Given: the mobility of electron is $1400 \mathrm{~cm}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}$, thermal voltage is 25 mV and electronic charge is $1.6 \times 10^{-19}$ Coulomb.]

The density of electron diffusion current (in $\mathrm{A} / \mathrm{mm}^2$ ) is $\_\_\_\_$ .

(rounded off to two decimal places)

The electron mobility $\mu_n$ in a non-degenerate germanium semiconductor at 300 K is $0.38 \mathrm{~m}^2 / \mathrm{Vs}$.

The electron diffusivity $D_n$ at 300 K (in $\mathrm{cm}^2 / \mathrm{s}$, rounded off to the nearest integer) is ____________

(Consider the Boltzmann constant $k_B=1.38 \times 10^{-23} \mathrm{~J} / \mathrm{K}$ and the charge of an electron $e=1.6 \times 10^{-19} \mathrm{C}$.)

A non-degenerate n-type semiconductor has 5 % neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band ($E_C$) and the donor energy level ($E_D$) has a degeneracy of 2. Assuming the thermal voltage to be 20 mV, the difference between $E_C$ and $E_D$ (in eV, rounded off to two decimal places) is _______.