GATE ECE 2026 | PN Junction Question 2 | Electronic Devices and VLSI

GATE ECE 2026

MCQ (Single Correct Answer)

-0.33

Consider a p-n junction diode when it is forward biased with 2 V . Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{f n}$ in the n -side and $E_{f p}$ in the $p$-side?

2 eV

1 eV

2 V

1 V

GATE ECE 2021

Numerical

-0

A silicon $P-N$ junction is shown in the figure. The doping in the $P$ region is $5 \times 10^{16} \mathrm{~cm}^3$ and doping in the $N$ region is $10 \times 10^{-16} \mathrm{~cm}^{-3}$. The parameters given are

Built-in voltage $\left(\phi_{b i}\right)=0.8 \mathrm{~V}$

Electro charge $(q)=1.6 \times 10^{-19} \mathrm{C}$

Vacuum permittivity of silicon $\left(\varepsilon_{s i}\right)=12$

GATE ECE 2021 Electronic Devices and VLSI - PN Junction Question 7 English The magnitude of reverse bias voltage that would completely deplete one of the two regions ( $P$ or $N$ ) prior to the other (rounded off to one decimal place) is $\_\_\_\_$ V.

Your input ____

GATE ECE 2020

MCQ (Single Correct Answer)

-0.33

Consider the recombination process via bulk traps in a forward biased $p n$ homojunction diode. The maximum recombination rate is $U_{\max }$. If the electron and the hole capture cross sections are equal, which one of the following is FALSE?

$U_{\max }$ occurs at the edges of the depletion region in the device.

$U_{\max }$ depends exponentially on the applied bias.

With all other parameters unchanged, $U_{\max }$ increases if the thermal velocity of carrier increases.

With all other parameters unchanged, $U_{\max }$ decreases if the intrinsic carrier density is reduced.

GATE ECE 2015 Set 1

Numerical

-0

In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V₀ (in volts) is ________. GATE ECE 2015 Set 1 Electronic Devices and VLSI - PN Junction Question 29 English