1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The diffusion potential across a P-N junction
A
decreases with increasing doping concentration
B
increases with decreasing band gap
C
does not depend on doping concentration
D
increases with increase in doping concentrations
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A zener diode works on the principle of
A
tunneling of charge carriers across the junction
B
thermo ionic emission
C
diffusion of charge carriers across the junction
D
hopping of charge carriers across the junction
3
GATE ECE 1990
MCQ (Single Correct Answer)
+1
-0.3
In a junction diode
A
The depletion capacitance increases with increase in the reverse bias
B
The depletion capacitance decreases with increase in the reverse bias
C
The depletion capacitance increases with increase in the forward bias
D
The depletion capacitance is much higher than the depletion capacitance when it is forward bias.
GATE ECE Subjects
EXAM MAP
Medical
NEETAIIMS
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
Defence
NDA
Staff Selection Commission
SSC CGL Tier I
CBSE
Class 12