A silicon $P-N$ junction is shown in the figure. The doping in the $P$ region is $5 \times 10^{16} \mathrm{~cm}^3$ and doping in the $N$ region is $10 \times 10^{-16} \mathrm{~cm}^{-3}$. The parameters given are

Built-in voltage $\left(\phi_{b i}\right)=0.8 \mathrm{~V}$

Electro charge $(q)=1.6 \times 10^{-19} \mathrm{C}$

Vacuum permittivity of silicon $\left(\varepsilon_{s i}\right)=12$

The magnitude of reverse bias voltage that would completely deplete one of the two regions ( $P$ or $N$ ) prior to the other (rounded off to one decimal place) is $\_\_\_\_$ V.

Consider the recombination process via bulk traps in a forward biased $p n$ homojunction diode. The maximum recombination rate is $U_{\max }$. If the electron and the hole capture cross sections are equal, which one of the following is FALSE?