1
GATE ECE 2008
+1
-0.3
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V.

The maximum and minimum values of the output voltage respectively are

A
6.1V, − 0.7V
B
0.7V, − 7.5V
C
7.5V, − 0.7V
D
7.5V, − 7.5V
2
GATE ECE 2007
+1
-0.3
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A
the edge of the depletion region on the p-side
B
the edge of the depletion region on the n-side
C
the p+n junction
D
the center of the depletion region on the n-side
3
GATE ECE 2002
+1
-0.3
In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to
A
740 mV
B
660 mV
C
680 mV
D
700 mV
4
GATE ECE 1998
+1
-0.3
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of
A
log I vs. log V
B
log I vs. V
C
I vs. log V
D
I vs. V
EXAM MAP
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