1

GATE ECE 2007

MCQ (Single Correct Answer)

+1

-0.3

In a p

^{+}n junction diode under reverse bias, the magnitude of electric field is maximum at2

GATE ECE 2002

MCQ (Single Correct Answer)

+1

-0.3

In the figure, a silicon diode is carrying a constant current of 1 mA. When the
temperature of the diode is 20°C, V

_{D}is found to be 700 mV. If the temperature rises to 40°C, V_{D}becomes approximately equal to3

GATE ECE 1998

MCQ (Single Correct Answer)

+1

-0.3

For small signal a.c. operation, a practical forward biased diode can be modeled
as

4

GATE ECE 1998

MCQ (Single Correct Answer)

+1

-0.3

The static characteristic of an adequately forward biased p-n junction is a straight
line, if the plot is of

Questions Asked from PN Junction (Marks 1)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics