1
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A
the edge of the depletion region on the p-side
B
the edge of the depletion region on the n-side
C
the p+n junction
D
the center of the depletion region on the n-side
2
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to GATE ECE 2002 Electronic Devices and VLSI - PN Junction Question 27 English
A
740 mV
B
660 mV
C
680 mV
D
700 mV
3
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
For small signal a.c. operation, a practical forward biased diode can be modeled as
A
a resistance and a capacitance in series
B
an ideal diode and resistance in parallel
C
a resistance and an ideal diode in series
D
a resistance
4
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of
A
log I vs. log V
B
log I vs. V
C
I vs. log V
D
I vs. V
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