1
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
A
Both the P-region and the N-region are heavily doped
B
The N-region is heavily doped compared to the P-region
C
The P-region is heavily doped compared to the N-region
D
An intrinsic silicon region is inserted between the P-region and the N-region
2
GATE ECE 2015 Set 1
Numerical
+1
-0
In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V0 (in volts) is ________. GATE ECE 2015 Set 1 Electronic Devices and VLSI - PN Junction Question 20 English
Your input ____
3
GATE ECE 2014 Set 1
Numerical
+1
-0
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.
Your input ____
4
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is
A
injection, and subsequent diffusion and recombination of minority carriers
B
injection, and subsequent drift and generation of minority carriers
C
extraction, and subsequent diffusion and generation of minority carriers
D
extraction, and subsequent drift and recombination of minority carriers
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CBSE
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