1
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A region of negative differential resistance is observed in the current voltage characteristics
of a silicon PN junction if
2
GATE ECE 2014 Set 1
Numerical
+1
-0
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W,
the photocurrent generated (in μA) is ________.
Your input ____
3
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a forward biased P-N junction diode, the sequence of events that best describes
the mechanism of current flow is
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume
that the diode drop is 0.7V when it is forward biased. The Zener breakdown
voltage is 6.8V.
The maximum and minimum values of the output voltage respectively are
Questions Asked from PN Junction (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics