1
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is
A
injection, and subsequent diffusion and recombination of minority carriers
B
injection, and subsequent drift and generation of minority carriers
C
extraction, and subsequent diffusion and generation of minority carriers
D
extraction, and subsequent drift and recombination of minority carriers
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V. GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 25 English

The maximum and minimum values of the output voltage respectively are

A
6.1V, − 0.7V
B
0.7V, − 7.5V
C
7.5V, − 0.7V
D
7.5V, − 7.5V
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is NOT associated with a P-N junction?
A
Junction capacitance
B
Charge Storage Capacitance
C
Depletion Capacitance
D
Channel Length Modulation
4
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A
the edge of the depletion region on the p-side
B
the edge of the depletion region on the n-side
C
the p+n junction
D
the center of the depletion region on the n-side
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