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1
GATE ECE 2020
MCQ (Single Correct Answer)
+1
-0.33

Consider the recombination process via bulk traps in a forward biased $p n$ homojunction diode. The maximum recombination rate is $U_{\max }$. If the electron and the hole capture cross sections are equal, which one of the following is FALSE?

A

$U_{\max }$ occurs at the edges of the depletion region in the device.

B

$U_{\max }$ depends exponentially on the applied bias.

C

With all other parameters unchanged, $U_{\max }$ increases if the thermal velocity of carrier increases.

D

With all other parameters unchanged, $U_{\max }$ decreases if the intrinsic carrier density is reduced.

2
GATE ECE 2015 Set 1
Numerical
+1
-0
In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V0 (in volts) is ________. GATE ECE 2015 Set 1 Electronic Devices and VLSI - PN Junction Question 29 English
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3
GATE ECE 2015 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
A
Both the P-region and the N-region are heavily doped
B
The N-region is heavily doped compared to the P-region
C
The P-region is heavily doped compared to the N-region
D
An intrinsic silicon region is inserted between the P-region and the N-region
4
GATE ECE 2014 Set 1
Numerical
+1
-0
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.
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