1
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
In the figure, a silicon diode is carrying a constant current of 1 mA. When the
temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature
rises to 40°C, VD becomes approximately equal to
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
The static characteristic of an adequately forward biased p-n junction is a straight
line, if the plot is of
3
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
For small signal a.c. operation, a practical forward biased diode can be modeled
as
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The diffusion potential across a P-N junction
GATE ECE Subjects
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Control Systems
Engineering Mathematics
Analog Circuits
Network Theory
Electromagnetics
Electronic Devices and VLSI
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
General Aptitude