1
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
In the figure, a silicon diode is carrying a constant current of 1 mA. When the
temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature
rises to 40°C, VD becomes approximately equal to
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
For small signal a.c. operation, a practical forward biased diode can be modeled
as
3
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
The static characteristic of an adequately forward biased p-n junction is a straight
line, if the plot is of
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The depletion capacitance,
CJ, of an abrupt P-N junction with constant doping on
either side varies with reverse bias, VR , as
Questions Asked from PN Junction (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
Electromagnetics
General Aptitude