1
GATE ECE 2006
+2
-0.6
An n-channel depletion MOSFET has following two points on its ID - VGS curve:

(i)VGS = 0 at Id = 12 mA and
(ii)VGS = -6 Volts at Zo =$$\infty$$

Which of the following Q-points will give the highest transconductance gain for small signals?

A
$${V_{GS\,}}\, = - 6\,Vots$$
B
$${V_{GS\,}}\, = - 3\,Vots$$
C
$${V_{GS\,}}\, = 0\,Vots$$
D
$${V_{GS\,}}\, = 3\,Vots$$
2
GATE ECE 2005
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$

Zi and Zo of the circuit are respectively

A
2 $$M\Omega$$ and 2 $$K\Omega$$
B
2 $$M\Omega$$ and 20/11 $$K\Omega$$
C
infinity and 2 $$M\Omega$$
D
infinity and 20/11$$M\Omega$$
3
GATE ECE 2005
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.

A
1.875 mS and 3.41
B
1.875 mS and -3.41
C
3.3 mS and -6
D
3.3 mS and 6
4
GATE ECE 2005
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$

ID and VDS under DC conditions are respectively

A
5.625 mA and 8.75 V
B
7.500 mA and 5.00V
C
4.500 mA and 11.00V
D
6.250 mA and 7.50V
EXAM MAP
Medical
NEET