GATE ECE 2005 | FET and MOSFET Question 14 | Analog Circuits

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 16 English

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.

1.875 mS and 3.41

1.875 mS and -3.41

3.3 mS and -6

3.3 mS and 6

GATE ECE 2003

MCQ (Single Correct Answer)

-0.6

The action of a JFET in its equivalent circuit can be best represented as a

current controlled current source

current controlled voltage source

voltage controlled voltage source

voltage controlled current source

GATE ECE 2002

MCQ (Single Correct Answer)

-0.6

Consider the following statements in connection with the CMOS inverter in the Figure. Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.

Statement 1: T₁ conducts when V_i $$ \ge \,2\,V$$.
Statement 2: T₁ is always in saturation when $${V_0}\, = \,0\,V$$.

Which of the following is correct?

GATE ECE 2002 Analog Circuits - FET and MOSFET Question 20 English

only Statement 1 is true

Only Statement 2 is true

Both the statements are true

Both the statements are FALSE

GATE ECE 1992

MCQ (Single Correct Answer)

-0.6

An n-channel JFET has a pinch-off voltage of V_p = -5V. V_DS(max) = 20V and g_m = 2mA/V. The minimum 'ON' resistance is achieved in the JFET for

$${V_{GS}} = -7V$$ and $${V_{DS}} = 0V$$

$${V_{GS}} = 7V$$ and $${V_{DS}} = 0V$$

$${V_{GS}} = 0V$$ and $${V_{DS}} = 20V$$

$${V_{GS}} = -7V$$ and $${V_{DS}} = 20V$$

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