1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
Zi and Zo of the circuit are respectively
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
4
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure.
Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.
Statement 1: T1 conducts when Vi $$ \ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.
Which of the following is correct?
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