1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 14 English

Zi and Zo of the circuit are respectively

A
2 $$M\Omega $$ and 2 $$K\Omega $$
B
2 $$M\Omega $$ and 20/11 $$K\Omega $$
C
infinity and 2 $$M\Omega $$
D
infinity and 20/11$$M\Omega $$
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 12 English

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.

A
1.875 mS and 3.41
B
1.875 mS and -3.41
C
3.3 mS and -6
D
3.3 mS and 6
3
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 13 English

ID and VDS under DC conditions are respectively

A
5.625 mA and 8.75 V
B
7.500 mA and 5.00V
C
4.500 mA and 11.00V
D
6.250 mA and 7.50V
4
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is GATE ECE 2005 Analog Circuits - FET and MOSFET Question 11 English 1 GATE ECE 2005 Analog Circuits - FET and MOSFET Question 11 English 2
A
1 V and the device is in active region
B
-1 V and the device is in saturation region.
C
1 V and the device is in saturation region.
D
-1 V and the device is in active region.
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