1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
Zi and Zo of the circuit are respectively
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
3
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure.
Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.
Statement 1: T1 conducts when Vi $$ \ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.
Which of the following is correct?
4
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
The JFET in the circuit shown in fig. has an IDSS = 10mA and Vp = -5V. The value of the resistance Rs for a drain current IDS = 6.4mA is (select the Nearest value).
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Discrete Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Representation of Continuous Time Signal Fourier Series Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Continuous Time Linear Invariant System Discrete Time Signal Z Transform Sampling
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