Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 $$\mu$$m and width 100 $$\mu$$m. The product of electron mobility ($$\mu$$_n) and oxide capacitance per unit area (C_ox) is $$\mu$$_nC_ox = 1 mA/V². The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V_GS = [2 $$-$$ sin(2t)] V and drain-to source voltage V_DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ___________.

Consider the circuit shown with an ideal long channel nMOSFET (enhancement mode, substrate is connected to the source). The transistor is appropriately biased in the saturation region with V_GG and V_DD such that it acts as a linear amplifier. v_i is the small-signal ac input voltage. v_A and v_B represent the small-signal voltages at the nodes A and B, respectively. The value of $${{{v_A}} \over {{v_B}}}$$ is __________ (rounded off to one decimal place).

(i)V_GS = 0 at I_d = 12 mA and
(ii)V_GS = -6 Volts at Z_o =$$\infty $$

Which of the following Q-points will give the highest transconductance gain for small signals?