1
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n -channel MOSFET M, the transconductance gm = 1 mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at GATE ECE 2013 Analog Circuits - FET and MOSFET Question 9 English
A
8
B
32
C
50
D
200
2
GATE ECE 2006
MCQ (Single Correct Answer)
+2
-0.6
An n-channel depletion MOSFET has following two points on its ID - VGS curve:

(i)VGS = 0 at Id = 12 mA and
(ii)VGS = -6 Volts at Zo =$$\infty $$

Which of the following Q-points will give the highest transconductance gain for small signals?

A
$${V_{GS\,}}\, = - 6\,Vots$$
B
$${V_{GS\,}}\, = - 3\,Vots$$
C
$${V_{GS\,}}\, = 0\,Vots$$
D
$${V_{GS\,}}\, = 3\,Vots$$
3
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is GATE ECE 2005 Analog Circuits - FET and MOSFET Question 11 English 1 GATE ECE 2005 Analog Circuits - FET and MOSFET Question 11 English 2
A
1 V and the device is in active region
B
-1 V and the device is in saturation region.
C
1 V and the device is in saturation region.
D
-1 V and the device is in active region.
4
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 13 English

ID and VDS under DC conditions are respectively

A
5.625 mA and 8.75 V
B
7.500 mA and 5.00V
C
4.500 mA and 11.00V
D
6.250 mA and 7.50V
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