1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
2
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure.
Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.
Statement 1: T1 conducts when Vi $$ \ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.
Which of the following is correct?
3
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JFET has a pinch-off voltage of Vp = -5V. VDS(max) = 20V and gm = 2mA/V. The minimum 'ON' resistance is achieved in the JFET for
4
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
The JFET in the circuit shown in fig. has an IDSS = 10mA and Vp = -5V. The value of the resistance Rs for a drain current IDS = 6.4mA is (select the Nearest value).
Questions Asked from FET and MOSFET (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
Electromagnetics
General Aptitude