1

GATE ECE 2003

MCQ (Single Correct Answer)

+2

-0.6

The action of a JFET in its equivalent circuit can be best represented as a

2

GATE ECE 2002

MCQ (Single Correct Answer)

+2

-0.6

Consider the following statements in connection with the CMOS inverter in the Figure.
Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.

**Statement 1:** T_{1} conducts when V_{i} $$ \ge \,2\,V$$.

**Statement 2:** T_{1} is always in saturation when $${V_0}\, = \,0\,V$$.

Which of the following is correct?

3

GATE ECE 1992

MCQ (Single Correct Answer)

+2

-0.6

An n-channel JFET has a pinch-off voltage of V

_{p}= -5V. V_{DS}(max) = 20V and g_{m}= 2mA/V. The minimum 'ON' resistance is achieved in the JFET for4

GATE ECE 1992

MCQ (Single Correct Answer)

+2

-0.6

The JFET in the circuit shown in fig. has an I

_{DSS}= 10mA and V_{p}= -5V. The value of the resistance R_{s}for a drain current I_{DS}= 6.4mA is (select the Nearest value).Questions Asked from FET and MOSFET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series
Discrete Time Signal Fourier Series Fourier Transform
Discrete Time Signal Z Transform
Continuous Time Linear Invariant System
Transmission of Signal Through Continuous Time LTI Systems
Discrete Time Linear Time Invariant Systems
Sampling
Continuous Time Signal Laplace Transform
Discrete Fourier Transform and Fast Fourier Transform
Transmission of Signal Through Discrete Time Lti Systems
Miscellaneous
Fourier Transform

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics