1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
2
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure.
Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.
Statement 1: T1 conducts when Vi $$ \ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.
Which of the following is correct?
3
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
The JFET in the circuit shown in fig. has an IDSS = 10mA and Vp = -5V. The value of the resistance Rs for a drain current IDS = 6.4mA is (select the Nearest value).
4
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JFET has a pinch-off voltage of Vp = -5V. VDS(max) = 20V and gm = 2mA/V. The minimum 'ON' resistance is achieved in the JFET for
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