1
GATE ECE 2003
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
A
current controlled current source
B
current controlled voltage source
C
voltage controlled voltage source
D
voltage controlled current source
2
GATE ECE 2002
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure. Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.

Statement 1: T1 conducts when Vi $$\ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.

Which of the following is correct?

A
only Statement 1 is true
B
Only Statement 2 is true
C
Both the statements are true
D
Both the statements are FALSE
3
GATE ECE 1992
+2
-0.6
An n-channel JFET has a pinch-off voltage of Vp = -5V. VDS(max) = 20V and gm = 2mA/V. The minimum 'ON' resistance is achieved in the JFET for
A
$${V_{GS}} = -7V$$ and $${V_{DS}} = 0V$$
B
$${V_{GS}} = 7V$$ and $${V_{DS}} = 0V$$
C
$${V_{GS}} = 0V$$ and $${V_{DS}} = 20V$$
D
$${V_{GS}} = -7V$$ and $${V_{DS}} = 20V$$
4
GATE ECE 1992
+2
-0.6
The JFET in the circuit shown in fig. has an IDSS = 10mA and Vp = -5V. The value of the resistance Rs for a drain current IDS = 6.4mA is (select the Nearest value).
A
150 ohms
B
470 ohms
C
560 ohms
D
1 Kilo ohm
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