1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The breakdown voltage of a transistor with its base open is BVCEO with emitter open is BVCBO, then
A
BVCEO = BVCBO
B
BVCEO > BVCBO
C
BVCEO < BVCBO
D
BVCEO is not related to BVCBO
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A BJT is said to be operating in the saturation region if
A
both the junctions are reverse biased
B
base-emitter junction is reverse biased and base-collector junction is forward biased.
C
base-emitter junction is forward biased and base-collector junction reverse biased
D
both the junctions are forward biased
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model is applicable to
A
bipolar junction transistors
B
NMOS transistors
C
unipolar junction transistors
D
junction field-effect transistors
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Early-Effect in a bipolar junction transistor is caused by
A
Fast-turn-on.
B
Fast-turn-off.
C
Large collector-base reverse bias
D
Large emitter-base forward bias
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