1
GATE ECE 2017 Set 1
MCQ (Single Correct Answer)
+1
-0.3
For a narrow base PNP BJT, the excess minority carrier concentration ($$\bigtriangleup n_E$$ for emitter, $$\bigtriangleup p_B$$ for base, $$\bigtriangleup n_E$$ for collector) normalized to equilibrium minority carrier concentration ($$\bigtriangleup n_{E0}$$ for emitter, $$\bigtriangleup p_{B0}$$ for base, $$\bigtriangleup n_{C0}$$ for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in? GATE ECE 2017 Set 1 Electronic Devices and VLSI - BJT and FET Question 14 English
A
Forward active
B
Saturation
C
Inverse active
D
Cutoff
2
GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________. GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English
Your input ____
3
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model of a BJT is valid
A
only in active mode
B
only in active and saturation modes
C
only in active and cut-off modes
D
in active, saturation and cut-off modes
4
GATE ECE 2015 Set 3
Numerical
+1
-0
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC(in Volts) is ______.
Your input ____
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