1
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
A
Current gain will increase
B
Unity gain frequency will increase
C
Emitter base junction capacitance will increase
D
Early voltage will increase
2
GATE ECE 2015 Set 3
Numerical
+1
-0
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC(in Volts) is ______.
Your input ____
3
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An increase in the base recombination of a BJT will increase
A
the common emitter dc current gain $$\beta$$
B
the breakdown voltage BVCEO
C
the unity-gain cut-off frequency fT
D
the transconductance gm
4
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current ICO = 0.6μA. This BJT is connected in the common emitter mode and operated in the active region with a base drive current IB=20μA. The collector current IC for this mode of operation is
A
0.98mA
B
0.99mA
C
1.0mA
D
1.01mA
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