1
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity. GATE ECE 2017 Set 2 Electronic Devices and VLSI - BJT and FET Question 12 English The value of the collector-to–emitter voltage VCE (in volt) is _______.
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2
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model of a BJT is valid
A
only in active mode
B
only in active and saturation modes
C
only in active and cut-off modes
D
in active, saturation and cut-off modes
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GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________. GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English
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4
GATE ECE 2015 Set 3
Numerical
+1
-0
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC(in Volts) is ______.
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