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GATE ECE 2017 Set 2
Numerical
+1
-0
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity.
The value of the collector-to–emitter voltage VCE (in volt) is _______.
![GATE ECE 2017 Set 2 Electronic Devices and VLSI - BJT and FET Question 12 English](https://gateclass.cdn.examgoal.net/examside/questions/240cedf605eee25e4098e059adbfe136a8ba9343c62df85c7d0ed90e9d324102.jpg)
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2
GATE ECE 2017 Set 1
MCQ (Single Correct Answer)
+1
-0.3
For a narrow base PNP BJT, the excess minority carrier concentration ($$\bigtriangleup n_E$$ for emitter,
$$\bigtriangleup p_B$$ for base, $$\bigtriangleup n_E$$ for collector) normalized to equilibrium minority carrier concentration
($$\bigtriangleup n_{E0}$$ for emitter, $$\bigtriangleup p_{B0}$$ for base, $$\bigtriangleup n_{C0}$$ for collector) in the quasi-neutral emitter, base and collector
regions are shown below. Which one of the following biasing modes is the transistor operating in?
![GATE ECE 2017 Set 1 Electronic Devices and VLSI - BJT and FET Question 14 English](https://gateclass.cdn.examgoal.net/examside/questions/1aa15c4c942974b495b547bb0cb1afbaf6266fbf6261f33113c2e5007c21fa2e.jpg)
![GATE ECE 2017 Set 1 Electronic Devices and VLSI - BJT and FET Question 14 English](https://gateclass.cdn.examgoal.net/examside/questions/1aa15c4c942974b495b547bb0cb1afbaf6266fbf6261f33113c2e5007c21fa2e.jpg)
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GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of
power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________.
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/7a81d7b285e38539a6237d53c5108c40d248bacca522101d8b6231ca18914847.jpg)
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/7a81d7b285e38539a6237d53c5108c40d248bacca522101d8b6231ca18914847.jpg)
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4
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model of a BJT is valid
Questions Asked from BJT and FET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Communications
Electromagnetics
General Aptitude