1
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity.
The value of the collector-to–emitter voltage VCE (in volt) is _______.
The value of the collector-to–emitter voltage VCE (in volt) is _______.Your input ____
2
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model of a BJT is valid
3
GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of
power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________.
Your input ____
4
GATE ECE 2015 Set 3
Numerical
+1
-0
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base
voltage VEB = 600 mV, the emitter-collector voltage VEC(in Volts) is ______.
Your input ____
Questions Asked from BJT and FET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series
Fourier Transform
Continuous Time Signal Laplace Transform
Discrete Time Signal Fourier Series Fourier Transform
Discrete Fourier Transform and Fast Fourier Transform
Discrete Time Signal Z Transform
Continuous Time Linear Invariant System
Discrete Time Linear Time Invariant Systems
Transmission of Signal Through Continuous Time LTI Systems
Sampling
Transmission of Signal Through Discrete Time Lti Systems
Miscellaneous
Communications
Electromagnetics
General Aptitude