1
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity.
The value of the collector-to–emitter voltage VCE (in volt) is _______.
The value of the collector-to–emitter voltage VCE (in volt) is _______.Your input ____
2
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias
across the base-collector junction is increased, then
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GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model of a BJT is valid
4
GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of
power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________.
Your input ____
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