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GATE ECE 2022
Numerical
+1
-0.33

An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG = 2V. The corresponding inversion charge density (QIN) is 2.2 $$\mu$$C/cm2. Assume oxide capacitance per unit area as Cox = 1.7 $$\mu$$F/cm2. For VG = 4V, the value of QIN is __________ $$\mu$$C/cm2 (rounded off to one decimal place).

GATE ECE 2022 Electronic Devices and VLSI - BJT and FET Question 1 English

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2
GATE ECE 2017 Set 1
MCQ (Single Correct Answer)
+1
-0.3
For a narrow base PNP BJT, the excess minority carrier concentration ($$\bigtriangleup n_E$$ for emitter, $$\bigtriangleup p_B$$ for base, $$\bigtriangleup n_E$$ for collector) normalized to equilibrium minority carrier concentration ($$\bigtriangleup n_{E0}$$ for emitter, $$\bigtriangleup p_{B0}$$ for base, $$\bigtriangleup n_{C0}$$ for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in? GATE ECE 2017 Set 1 Electronic Devices and VLSI - BJT and FET Question 14 English
A
Forward active
B
Saturation
C
Inverse active
D
Cutoff
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GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
A
the effective base width increases and common – emitter current gain increases
B
the effective base width increases and common – emitter current gain decreases
C
the effective base width decreases and common – emitter current gain increases
D
the effective base width decreases and common – emitter current gain decreases
4
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity. GATE ECE 2017 Set 2 Electronic Devices and VLSI - BJT and FET Question 12 English The value of the collector-to–emitter voltage VCE (in volt) is _______.
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