1
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An increase in the base recombination of a BJT will increase
A
the common emitter dc current gain $$\beta$$
B
the breakdown voltage BVCEO
C
the unity-gain cut-off frequency fT
D
the transconductance gm
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current ICO = 0.6μA. This BJT is connected in the common emitter mode and operated in the active region with a base drive current IB=20μA. The collector current IC for this mode of operation is
A
0.98mA
B
0.99mA
C
1.0mA
D
1.01mA
3
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
If the transistor in Figure is in saturation, then GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 21 English
A
IC is always equal to bdcIB
B
IC is always equal to -bdcIB
C
IC is greater than or equal to bdcIB
D
IC is less than bdcIB
4
GATE ECE 2001
MCQ (Single Correct Answer)
+1
-0.3
MOSFET can be used as a
A
Current controlled capacitor
B
Voltage controlled capacitor
C
Current controlled inductor
D
Voltage controlled inductor
GATE ECE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12