GATE ECE 2011 | BJT and FET Question 14 | Electronic Devices and VLSI | GATE ECE - ExamSIDE.com

1

GATE ECE 2011

MCQ (Single Correct Answer)

+1

-0.3

For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current I_CO = 0.6μA. This BJT is connected in the common emitter mode and operated in the active region with a base drive current I_B=20μA. The collector current IC for this mode of operation is

A

0.98mA

B

0.99mA

C

1.0mA

D

1.01mA

2

GATE ECE 2002

MCQ (Single Correct Answer)

+1

-0.3

If the transistor in Figure is in saturation, then GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 22 English

GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 22 English

A

I_C is always equal to b_dcI_B

B

I_C is always equal to -b_dcI_B

C

I_C is greater than or equal to b_dcI_B

D

I_C is less than b_dcI_B

3

GATE ECE 2001

MCQ (Single Correct Answer)

+1

-0.3

MOSFET can be used as a

A

Current controlled capacitor

B

Voltage controlled capacitor

C

Current controlled inductor

D

Voltage controlled inductor

4

GATE ECE 1995

MCQ (Single Correct Answer)

+1

-0.3

A BJT is said to be operating in the saturation region if

A

both the junctions are reverse biased

B

base-emitter junction is reverse biased and base-collector junction is forward biased.

C

base-emitter junction is forward biased and base-collector junction reverse biased

D

both the junctions are forward biased

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