1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$
ID and VDS under DC conditions are respectively
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
4
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure.
Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.
Statement 1: T1 conducts when Vi $$ \ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.
Which of the following is correct?
Questions Asked from FET and MOSFET (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Communications
Electromagnetics
General Aptitude