1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 13 English

ID and VDS under DC conditions are respectively

A
5.625 mA and 8.75 V
B
7.500 mA and 5.00V
C
4.500 mA and 11.00V
D
6.250 mA and 7.50V
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is GATE ECE 2005 Analog Circuits - FET and MOSFET Question 11 English 1 GATE ECE 2005 Analog Circuits - FET and MOSFET Question 11 English 2
A
1 V and the device is in active region
B
-1 V and the device is in saturation region.
C
1 V and the device is in saturation region.
D
-1 V and the device is in active region.
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
A
current controlled current source
B
current controlled voltage source
C
voltage controlled voltage source
D
voltage controlled current source
4
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure. Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.

Statement 1: T1 conducts when Vi $$ \ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.

Which of the following is correct?

GATE ECE 2002 Analog Circuits - FET and MOSFET Question 16 English
A
only Statement 1 is true
B
Only Statement 2 is true
C
Both the statements are true
D
Both the statements are FALSE
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