1
GATE ECE 2022
Numerical
+1
-0.33
Consider the circuit shown with an ideal long channel nMOSFET (enhancement mode, substrate is connected to the source). The transistor is appropriately biased in the saturation region with VGG and VDD such that it acts as a linear amplifier. vi is the small-signal ac input voltage. vA and vB represent the small-signal voltages at the nodes A and B, respectively. The value of $${{{v_A}} \over {{v_B}}}$$ is __________ (rounded off to one decimal place).
Your input ____
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
In the MOSFET amplifier of the figure the signal output V1 and V2 obey the relationship

3
GATE ECE 1995
Fill in the Blanks
+1
-0
An n-channel JFET has IDSS = 1 mA and Vp = -5 V. Its maximum transconductance is ______
4
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of a current carriers through the channel of an FET decides its ____________characteristics.
Questions Asked from FET and MOSFET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series
Discrete Time Signal Fourier Series Fourier Transform
Discrete Time Signal Z Transform
Continuous Time Linear Invariant System
Transmission of Signal Through Continuous Time LTI Systems
Discrete Time Linear Time Invariant Systems
Sampling
Continuous Time Signal Laplace Transform
Discrete Fourier Transform and Fast Fourier Transform
Transmission of Signal Through Discrete Time Lti Systems
Miscellaneous
Fourier Transform
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics