1
GATE ECE 2022
Numerical
+1
-0.33

Consider the circuit shown with an ideal long channel nMOSFET (enhancement mode, substrate is connected to the source). The transistor is appropriately biased in the saturation region with VGG and VDD such that it acts as a linear amplifier. vi is the small-signal ac input voltage. vA and vB represent the small-signal voltages at the nodes A and B, respectively. The value of $${{{v_A}} \over {{v_B}}}$$ is __________ (rounded off to one decimal place). 2
GATE ECE 1998
+1
-0.3
In the MOSFET amplifier of the figure the signal output V1 and V2 obey the relationship A
$${V_1} = {{{V_2}} \over 2}$$
B
$${V_1} =- {{{V_2}} \over 2}$$
C
$${V_1} = 2{V_2}$$
D
$${V_1} =- 2{V_2}$$
3
GATE ECE 1995
Fill in the Blanks
+1
-0
An n-channel JFET has IDSS = 1 mA and Vp = -5 V. Its maximum transconductance is ______
4
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of a current carriers through the channel of an FET decides its ____________characteristics.
GATE ECE Subjects
Signals and Systems
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics
EXAM MAP
Joint Entrance Examination