1

GATE ECE 2022

Numerical

+1

-0.33

Consider the circuit shown with an ideal long channel nMOSFET (enhancement mode, substrate is connected to the source). The transistor is appropriately biased in the saturation region with V_{GG} and V_{DD} such that it acts as a linear amplifier. v_{i} is the small-signal ac input voltage. v_{A} and v_{B} represent the small-signal voltages at the nodes A and B, respectively. The value of $${{{v_A}} \over {{v_B}}}$$ is __________ (rounded off to one decimal place).

Your input ____

2

GATE ECE 1998

MCQ (Single Correct Answer)

+1

-0.3

In the MOSFET amplifier of the figure the signal output V

_{1}and V_{2}obey the relationship3

GATE ECE 1995

Fill in the Blanks

+1

-0

An n-channel JFET has I

_{DSS}= 1 mA and V_{p}= -5 V. Its maximum transconductance is ______4

GATE ECE 1994

Fill in the Blanks

+1

-0

The transit time of a current carriers through the channel of an FET decides its ____________characteristics.

Questions Asked from FET and MOSFET (Marks 1)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics