1
GATE ECE 2022
Numerical
+1
-0.33

Consider the circuit shown with an ideal long channel nMOSFET (enhancement mode, substrate is connected to the source). The transistor is appropriately biased in the saturation region with VGG and VDD such that it acts as a linear amplifier. vi is the small-signal ac input voltage. vA and vB represent the small-signal voltages at the nodes A and B, respectively. The value of $${{{v_A}} \over {{v_B}}}$$ is __________ (rounded off to one decimal place).

GATE ECE 2022 Analog Circuits - FET and MOSFET Question 2 English

Your input ____
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
In the MOSFET amplifier of the figure the signal output V1 and V2 obey the relationship GATE ECE 1998 Analog Circuits - FET and MOSFET Question 19 English
A
$${V_1} = {{{V_2}} \over 2}$$
B
$${V_1} =- {{{V_2}} \over 2}$$
C
$${V_1} = 2{V_2}$$
D
$${V_1} =- 2{V_2}$$
3
GATE ECE 1995
Fill in the Blanks
+1
-0
An n-channel JFET has IDSS = 1 mA and Vp = -5 V. Its maximum transconductance is ______
4
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of a current carriers through the channel of an FET decides its ____________characteristics.
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