1

GATE ECE 2010

MCQ (Single Correct Answer)

+2

-0.6

In a uniformly doped BJT, assume that N

_{E}, N_{B}and N_{C}are the emitter, base and collector dopings in atoms/cm^{3}, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?2

GATE ECE 2007

MCQ (Single Correct Answer)

+2

-0.6

The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection
efficiency is 0.995, the base transport factor is:

3

GATE ECE 1999

MCQ (Single Correct Answer)

+2

-0.6

An n-channel JEFT has I

_{DSS}= 2 mA and V_{p}= −4 V. It's transconductance g_{m}(in mA/V) for an applied gate-to-source voltage V_{GS}of –2V is:4

GATE ECE 1992

Fill in the Blanks

+2

-0

In a transistor having finite B, the forward bias across the base emitter junction
is kept constant and the reverse bias across the collector base junction is
increased. Neglecting the leakage across the collector base junction and the
depletion region generating current, the base current will __________.
(increase/decrease/remain constant).

Questions Asked from BJT and FET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics