1
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and
collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of
the BJT is close unity, which one of the following conditions is TRUE?
2
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection
efficiency is 0.995, the base transport factor is:
3
GATE ECE 1999
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JEFT has IDSS = 2 mA and Vp = −4 V. It's transconductance gm (in
mA/V) for an applied gate-to-source voltage VGS of –2V is:
4
GATE ECE 1992
Fill in the Blanks
+2
-0
In a transistor having finite B, the forward bias across the base emitter junction
is kept constant and the reverse bias across the collector base junction is
increased. Neglecting the leakage across the collector base junction and the
depletion region generating current, the base current will __________.
(increase/decrease/remain constant).
Questions Asked from BJT and FET (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Communications
Electromagnetics
General Aptitude