1
GATE ECE 1992
Fill in the Blanks
+2
-0
In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base junction and the depletion region generating current, the base current will __________. (increase/decrease/remain constant).
2
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JFET has a pinch-off voltage VP = -5 V, VDS(max) = 20 V and gm = 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT for
A
VGS = - 7 V and VDS = 0 V
B
VGS = 0 V and VDS = 0 V
C
VGS = 0 V and VDS = 20 V
D
VGS = - 7 V and VDS = 20 V
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