1

GATE ECE 1999

MCQ (Single Correct Answer)

+2

-0.6

An n-channel JEFT has I

_{DSS}= 2 mA and V_{p}= −4 V. It's transconductance g_{m}(in mA/V) for an applied gate-to-source voltage V_{GS}of –2V is:2

GATE ECE 1992

Fill in the Blanks

+2

-0

In a transistor having finite B, the forward bias across the base emitter junction
is kept constant and the reverse bias across the collector base junction is
increased. Neglecting the leakage across the collector base junction and the
depletion region generating current, the base current will __________.
(increase/decrease/remain constant).

3

GATE ECE 1992

MCQ (Single Correct Answer)

+2

-0.6

An n-channel JFET has a pinch-off voltage V

_{P}= -5 V, V_{DS}(max) = 20 V and g_{m}= 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT forQuestions Asked from BJT and FET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Network Theory

Control Systems

Electronic Devices and VLSI

Analog Circuits

Digital Circuits

Microprocessors

Signals and Systems

Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform

Communications

Electromagnetics

General Aptitude