1

GATE ECE 2015 Set 3

Numerical

+2

-0

An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active
region with V

_{BE}= 700 mV. The thermal voltage (V_{T}) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in μA) is _____.Your input ____

2

GATE ECE 2014 Set 4

Numerical

+2

-0

Consider two BJT's biased at the same collector current with area A

_{1}= 0.2 μm × 0.2 μm and A_{2}= 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10^{10}cm^{-3}, and q = 1.6 × 10^{-19}C, the difference between the base-emitter voltages (in mV) of the two BJT's (i.e., V_{BE1}– V_{BE2}) is___________.Your input ____

3

GATE ECE 2011

MCQ (Single Correct Answer)

+2

-0.6

The channel resistance of an N-channel JFET shown in the figure below is 600 W
when the full channel thickness (t

_{ch}) of 10 μm is available for conduction. The built-in voltage of the gate P^{+}N junction (V_{bi}) is -1 V. When the gate to source voltage (V_{GS}) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_{GS}= -3 V is4

GATE ECE 2011

MCQ (Single Correct Answer)

+2

-0.6

The channel resistance of an N-channel JFET shown in the figure below is 600 W
when the full channel thickness (t

_{ch}) of 10 μm is available for conduction. The built-in voltage of the gate P^{+}N junction (V_{bi}) is -1 V. When the gate to source voltage (V_{GS}) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_{GS}= 0 V isQuestions Asked from BJT and FET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Network Theory

Control Systems

Electronic Devices and VLSI

Analog Circuits

Digital Circuits

Microprocessors

Signals and Systems

Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous

Communications

Electromagnetics

General Aptitude