1

GATE ECE 2014 Set 4

Numerical

+2

-0

Consider two BJT's biased at the same collector current with area A

_{1}= 0.2 μm × 0.2 μm and A_{2}= 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10^{10}cm^{-3}, and q = 1.6 × 10^{-19}C, the difference between the base-emitter voltages (in mV) of the two BJT's (i.e., V_{BE1}– V_{BE2}) is___________.Your input ____

2

GATE ECE 2011

MCQ (Single Correct Answer)

+2

-0.6

The channel resistance of an N-channel JFET shown in the figure below is 600 W
when the full channel thickness (t

_{ch}) of 10 μm is available for conduction. The built-in voltage of the gate P^{+}N junction (V_{bi}) is -1 V. When the gate to source voltage (V_{GS}) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_{GS}= -3 V is3

GATE ECE 2011

MCQ (Single Correct Answer)

+2

-0.6

The channel resistance of an N-channel JFET shown in the figure below is 600 W
when the full channel thickness (t

_{ch}) of 10 μm is available for conduction. The built-in voltage of the gate P^{+}N junction (V_{bi}) is -1 V. When the gate to source voltage (V_{GS}) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_{GS}= 0 V is4

GATE ECE 2010

MCQ (Single Correct Answer)

+2

-0.6

In a uniformly doped BJT, assume that N

_{E}, N_{B}and N_{C}are the emitter, base and collector dopings in atoms/cm^{3}, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?Questions Asked from BJT and FET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics