Consider two BJT's biased at the same collector current with area A₁ = 0.2 μm × 0.2 μm and A₂ = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10¹⁰ cm^-3, and q = 1.6 × 10^-19 C, the difference between the base-emitter voltages (in mV) of the two BJT's (i.e., V_BE1 – V_BE2) is___________.

The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (t_ch) of 10 μm is available for conduction. The built-in voltage of the gate P⁺N junction (V_bi) is -1 V. When the gate to source voltage (V_GS) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_GS = -3 V is

The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (t_ch) of 10 μm is available for conduction. The built-in voltage of the gate P⁺N junction (V_bi) is -1 V. When the gate to source voltage (V_GS) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_GS = 0 V is

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector dopings in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?