1
GATE ECE 2011
MCQ (Single Correct Answer)
+2
-0.6
The channel resistance of an N-channel JFET shown in the figure below is 600 W
when the full channel thickness (tch) of 10 μm is available for conduction. The
built-in voltage of the gate P+N junction (Vbi) is -1 V. When the gate to source
voltage (VGS) is 0 V, the channel is depleted by 1 μm on each side due to the built in
voltage and hence the thickness available for conduction is only 8 μm
The channel resistance when VGS = -3 V is
The channel resistance when VGS = -3 V is2
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and
collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of
the BJT is close unity, which one of the following conditions is TRUE?
3
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection
efficiency is 0.995, the base transport factor is:
4
GATE ECE 1999
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JEFT has IDSS = 2 mA and Vp = −4 V. It's transconductance gm (in
mA/V) for an applied gate-to-source voltage VGS of –2V is:
Questions Asked from BJT and FET (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Signals and Systems
Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous
Network Theory
Control Systems
Digital Circuits
General Aptitude
Electronic Devices and VLSI
Analog Circuits
Engineering Mathematics
Microprocessors
Communications
Electromagnetics