The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:

An n-channel JEFT has I_DSS = 2 mA and V_p = −4 V. It's transconductance g_m (in mA/V) for an applied gate-to-source voltage V_GS of –2V is:

In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base junction and the depletion region generating current, the base current will __________. (increase/decrease/remain constant).

An n-channel JFET has a pinch-off voltage V_P = -5 V, V_DS(max) = 20 V and g_m = 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT for