1
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:
A
0.980
B
0.985
C
0.990
D
0.995
2
GATE ECE 1999
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JEFT has IDSS = 2 mA and Vp = −4 V. It's transconductance gm (in mA/V) for an applied gate-to-source voltage VGS of –2V is:
A
0.25
B
0.5
C
0.75
D
1.0
3
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JFET has a pinch-off voltage VP = -5 V, VDS(max) = 20 V and gm = 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT for
A
VGS = - 7 V and VDS = 0 V
B
VGS = 0 V and VDS = 0 V
C
VGS = 0 V and VDS = 20 V
D
VGS = - 7 V and VDS = 20 V
4
GATE ECE 1992
Fill in the Blanks
+2
-0
In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base junction and the depletion region generating current, the base current will __________. (increase/decrease/remain constant).
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