1
GATE ECE 2005
+2
-0.6
For the circuit in figure, the phase current $${{\rm I}_1}$$ is
A
$${{10\sqrt 3 } \over 2}\angle {90^0}$$ Amps
B
$${{10\sqrt 3 } \over 2}\angle - {90^0}$$ Amps
C
$$5\angle {60^0}$$ Amps
D
$$5\angle - {60^0}$$ Amps
2
GATE ECE 2004
+2
-0.6

Consider the following statements S1 and S2.

S1: The $$\beta$$ of a bipolar transistor reduces if the base width is increased.

S2: The $$\beta$$ of a bipolar transistor increases if the doping concentration in the base in increased

Which one of the following is correct?
A
S1 is FALSE and S2 is TRUE
B
Both S1 and S2 are TRUE
C
S1 is TRUE and S2 is FALSE
D
Both S1 and S2 are FALSE
3
GATE ECE 2004
+2
-0.6
The transfer function $$H\left( s \right) = {{{V_0}\left( s \right)} \over {{V_i}\left( s \right)}}$$ of an R-L-C circuit is given by
$$H\left( s \right) = {{{{10}^6}} \over {{s^2} + 20s + {{10}^6}}}$$

The Quality factor (Q-factore) of this circuit is

A
$$25$$
B
$$50$$
C
$$100$$
D
$$5000$$
4
GATE ECE 2003
+2
-0.6
The current flowing through the resistance R in the circuit in figure has the form P cos 4t, where P is
A
(0.18 + j 0.72)
B
(0.46 + j 1.90)
C
-(0.18 + j 1.90)
D
-(0.192 + j 0.144)
EXAM MAP
Medical
NEET