1
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
Each transistor in the Darlington pair (see Fig. below) has hfe = 100. The overall hfe of the composite transistor neglecting the leakage current is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 45 English
A
1000
B
10001
C
10100
D
10200
2
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
The amplifier circuit shown below uses a compostie transistor of a MOSFET and BIPOLAR in cascade. ALL capacitance are large. gm of the MOSFET = 2 mA/V , and hfe of the BIPOLAR = 99. The overall Transconductance gm of the composite transistor is GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 20 English
A
198 mA/V.
B
9.9 mA/V.
C
4.95 mA/V.
D
1.98 mA/V.
3
GATE ECE 1988
MCQ (Single Correct Answer)
+2
-0.6
The transistor in the amplifier shown below has following parameters: $$${h_{fe}}\, = \,100,\,{h_{ie}}\, = \,2k\Omega ,\,{h_{re}}\, = \,0,$$$ $${h_{oe}}\, = \,0.05\,\,m\Omega .\,\,C$$ is very large.

The output impedance is

GATE ECE 1988 Analog Circuits - Bipolar Junction Transistor Question 19 English
A
$$20k\Omega .$$
B
$$16k\Omega .$$
C
$$5k\Omega .$$
D
$$4k\Omega .$$
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