1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model is applicable to
A
bipolar junction transistors
B
NMOS transistors
C
unipolar junction transistors
D
junction field-effect transistors
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Early-Effect in a bipolar junction transistor is caused by
A
Fast-turn-on.
B
Fast-turn-off.
C
Large collector-base reverse bias
D
Large emitter-base forward bias
3
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of the current carriers through the channel of an FET decides its ____________characteristics.
4
GATE ECE 1994
True or False
+1
-0
Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.
A
TRUE
B
FALSE
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