1

GATE ECE 2011

MCQ (Single Correct Answer)

+2

-0.6

The channel resistance of an N-channel JFET shown in the figure below is 600 W
when the full channel thickness (t

_{ch}) of 10 μm is available for conduction. The built-in voltage of the gate P^{+}N junction (V_{bi}) is -1 V. When the gate to source voltage (V_{GS}) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm The channel resistance when V_{GS}= 0 V is2

GATE ECE 2010

MCQ (Single Correct Answer)

+2

-0.6

In a uniformly doped BJT, assume that N

_{E}, N_{B}and N_{C}are the emitter, base and collector dopings in atoms/cm^{3}, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?3

GATE ECE 2007

MCQ (Single Correct Answer)

+2

-0.6

The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection
efficiency is 0.995, the base transport factor is:

4

GATE ECE 1999

MCQ (Single Correct Answer)

+2

-0.6

An n-channel JEFT has I

_{DSS}= 2 mA and V_{p}= −4 V. It's transconductance g_{m}(in mA/V) for an applied gate-to-source voltage V_{GS}of –2V is:Questions Asked from BJT and FET (Marks 2)

Number in Brackets after Paper Indicates No. of Questions

GATE ECE Subjects

Signals and Systems

Representation of Continuous Time Signal Fourier Series Fourier Transform Continuous Time Signal Laplace Transform Discrete Time Signal Fourier Series Fourier Transform Discrete Fourier Transform and Fast Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Discrete Time Linear Time Invariant Systems Transmission of Signal Through Continuous Time LTI Systems Sampling Transmission of Signal Through Discrete Time Lti Systems Miscellaneous

Network Theory

Control Systems

Digital Circuits

General Aptitude

Electronic Devices and VLSI

Analog Circuits

Engineering Mathematics

Microprocessors

Communications

Electromagnetics